High photoluminescence intensity of heterostructure AlGaN-based DUV-LED through uniform carrier distribution

We report a numerical analysis of the variation of Aluminium (Al) composition in Al Gallium Nitride (AlGaN)-based Deep-Ultraviolet Light-Emitting Diode (DUV-LED) and its effects on the carrier concentration, radiative recombination, and photoluminescence (PL). Three different structures with differe...

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Bibliographic Details

Main Authors:	Hairol Aman, Mohammad Amirul, Ahmad Fajri, Faris Azim, Ahmad Noorden, Ahmad Fakhrurrazi, Daud, Suzairi, Bahadoran, Mahdi, Abdul Kadir, Muhammad Zamzuri
Format:	Article
Language:	en en
Published:	IOP Publishing 2023
Subjects:	QC Physics
Online Access:	http://irep.iium.edu.my/101616/7/101616_High%20photoluminescence%20intensity%20of%20heterostructure.pdf http://irep.iium.edu.my/101616/13/101616_High%20photoluminescence%20intensity%20of%20heterostructure_SCOPUS.pdf http://irep.iium.edu.my/101616/ https://iopscience.iop.org/article/10.1088/1402-4896/aca43f/meta
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