Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs
In this work, the emission efficiency of InxGa1-xN based light emitting diodes (LEDs) had been numerically investigated with the variation of the number of quantum well. From our calculation, we found that non-uniformity of carriers distribution (especially electron) in the wells leads to serious in...
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| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | en |
| Published: |
Universiti Kebangsaan Malaysia
2014
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| Online Access: | http://journalarticle.ukm.my/7819/1/13_N._Zainal.pdf http://journalarticle.ukm.my/7819/ http://www.ukm.my/jsm/ |
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