Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature
The electronic band structure, density of states (DOS) and carrier concentration of a (13,13) metallic and a (13,0) semiconducting Single Wall Carbon Nanotube (SWCNT) have been estimated and simulated by using the Fermi-Dirac distribution function. The energy dispersion E(k) relation for metallic SW...
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Universiti Kebangsaan Malaysia
2010
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| Online Access: | http://journalarticle.ukm.my/7380/1/01_Md_Yeaminhossain.pdf http://journalarticle.ukm.my/7380/ http://www.ukm.my/jsm/english_journals/vol39num4_2010/contentsVol39num4_2010.html |
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| author | J. Karamdel, M. Damghanian, F. Razaghian, C.F. Dee, B. Yeop Majlis, |
| author_facet | J. Karamdel, M. Damghanian, F. Razaghian, C.F. Dee, B. Yeop Majlis, |
| author_sort | J. Karamdel, |
| building | Tun Sri Lanang Library |
| collection | Institutional Repository |
| content_provider | Universiti Kebangsaan Malaysia |
| content_source | UKM Journal Article Repository |
| continent | Asia |
| country | Malaysia |
| description | The electronic band structure, density of states (DOS) and carrier concentration of a (13,13) metallic and a (13,0) semiconducting Single Wall Carbon Nanotube (SWCNT) have been estimated and simulated by using the Fermi-Dirac distribution function. The energy dispersion E(k) relation for metallic SWCNT near the minimum energy is linear and the Fermi level was independent of temperature (T). On the other hand for semiconducting SWCNT the E(k) relation is parabolic. The normalized Fermi-Energy (EF – EC) in the nondegenerate regime is a weak (logarithmic) function of carrier concentration and varies linearly with T. In the degenerate condition, the Fermi level was independent of T and was a strong function of carrier concentration. |
| format | Article |
| id | my-ukm.journal-7380 |
| institution | Universiti Kebangsaan Malaysia |
| language | en |
| publishDate | 2010 |
| publisher | Universiti Kebangsaan Malaysia |
| record_format | eprints |
| spelling | my-ukm.journal-73802016-12-14T06:43:54Z http://journalarticle.ukm.my/7380/ Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature J. Karamdel, M. Damghanian, F. Razaghian, C.F. Dee, B. Yeop Majlis, The electronic band structure, density of states (DOS) and carrier concentration of a (13,13) metallic and a (13,0) semiconducting Single Wall Carbon Nanotube (SWCNT) have been estimated and simulated by using the Fermi-Dirac distribution function. The energy dispersion E(k) relation for metallic SWCNT near the minimum energy is linear and the Fermi level was independent of temperature (T). On the other hand for semiconducting SWCNT the E(k) relation is parabolic. The normalized Fermi-Energy (EF – EC) in the nondegenerate regime is a weak (logarithmic) function of carrier concentration and varies linearly with T. In the degenerate condition, the Fermi level was independent of T and was a strong function of carrier concentration. Universiti Kebangsaan Malaysia 2010-08 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/7380/1/01_Md_Yeaminhossain.pdf J. Karamdel, and M. Damghanian, and F. Razaghian, and C.F. Dee, and B. Yeop Majlis, (2010) Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature. Sains Malaysiana, 39 (4). pp. 615-620. ISSN 0126-6039 http://www.ukm.my/jsm/english_journals/vol39num4_2010/contentsVol39num4_2010.html |
| spellingShingle | J. Karamdel, M. Damghanian, F. Razaghian, C.F. Dee, B. Yeop Majlis, Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature |
| title | Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature |
| title_full | Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature |
| title_fullStr | Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature |
| title_full_unstemmed | Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature |
| title_short | Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature |
| title_sort | dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature |
| url | http://journalarticle.ukm.my/7380/1/01_Md_Yeaminhossain.pdf http://journalarticle.ukm.my/7380/ http://www.ukm.my/jsm/english_journals/vol39num4_2010/contentsVol39num4_2010.html |
| url_provider | http://journalarticle.ukm.my/ |