Aluminium-induced crystallization of silicon thin film by excimer laser annealing
Polycrystalline silicon (poly-Si) film was fabricated by indirect process of re-crystallization of amorphous silicon (a-Si) thin film. This enhancement process is important to determine the performance of silicon thin film (STF). In this attempt, a fundamental study was carried out to enhance the cr...
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| Language: | en |
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Universiti Kebangsaan Malaysia
2013
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| Online Access: | http://journalarticle.ukm.my/5907/1/15%2520Siti%2520Noraiza.pdf http://journalarticle.ukm.my/5907/ http://www.ukm.my/jsm/ |
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| _version_ | 1831355657461170176 |
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| author | Siti Noraiza Ab Razak, Noriah Bidin, |
| author_facet | Siti Noraiza Ab Razak, Noriah Bidin, |
| author_sort | Siti Noraiza Ab Razak, |
| building | Tun Sri Lanang Library |
| collection | Institutional Repository |
| content_provider | Universiti Kebangsaan Malaysia |
| content_source | UKM Journal Article Repository |
| continent | Asia |
| country | Malaysia |
| description | Polycrystalline silicon (poly-Si) film was fabricated by indirect process of re-crystallization of amorphous silicon (a-Si) thin film. This enhancement process is important to determine the performance of silicon thin film (STF). In this attempt, a fundamental study was carried out to enhance the crystallization of aluminium doped silicon thin film. An a-Si thin film was prepared by low pressure physical vapour deposition (PVD) and doped with 10% aluminium. The aluminium-induced crystallization (AIC) process was carried out in two sequence steps. Firstly, the amorphous film was annealed by using conventional heat treatment at operating temperature of 350°C. Secondly, the poly-Si underwent excimer laser anneling (ELA). The microstructure of thin film was analyzed using atomic force microscope (AFM). The results showed that, the grain size of the a-Si film is increased with the energy density of the excimer laser. The optimum grain size obtained is 129 nm corresponding to energy density of 356 mJ cm-2. |
| format | Article |
| id | my-ukm.journal-5907 |
| institution | Universiti Kebangsaan Malaysia |
| language | en |
| publishDate | 2013 |
| publisher | Universiti Kebangsaan Malaysia |
| record_format | eprints |
| spelling | my-ukm.journal-59072016-12-14T06:39:49Z http://journalarticle.ukm.my/5907/ Aluminium-induced crystallization of silicon thin film by excimer laser annealing Siti Noraiza Ab Razak, Noriah Bidin, Polycrystalline silicon (poly-Si) film was fabricated by indirect process of re-crystallization of amorphous silicon (a-Si) thin film. This enhancement process is important to determine the performance of silicon thin film (STF). In this attempt, a fundamental study was carried out to enhance the crystallization of aluminium doped silicon thin film. An a-Si thin film was prepared by low pressure physical vapour deposition (PVD) and doped with 10% aluminium. The aluminium-induced crystallization (AIC) process was carried out in two sequence steps. Firstly, the amorphous film was annealed by using conventional heat treatment at operating temperature of 350°C. Secondly, the poly-Si underwent excimer laser anneling (ELA). The microstructure of thin film was analyzed using atomic force microscope (AFM). The results showed that, the grain size of the a-Si film is increased with the energy density of the excimer laser. The optimum grain size obtained is 129 nm corresponding to energy density of 356 mJ cm-2. Universiti Kebangsaan Malaysia 2013-02 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/5907/1/15%2520Siti%2520Noraiza.pdf Siti Noraiza Ab Razak, and Noriah Bidin, (2013) Aluminium-induced crystallization of silicon thin film by excimer laser annealing. Sains Malaysiana, 42 (2). pp. 219-222. ISSN 0126-6039 http://www.ukm.my/jsm/ |
| spellingShingle | Siti Noraiza Ab Razak, Noriah Bidin, Aluminium-induced crystallization of silicon thin film by excimer laser annealing |
| title | Aluminium-induced crystallization of silicon thin film by excimer laser annealing |
| title_full | Aluminium-induced crystallization of silicon thin film by excimer laser annealing |
| title_fullStr | Aluminium-induced crystallization of silicon thin film by excimer laser annealing |
| title_full_unstemmed | Aluminium-induced crystallization of silicon thin film by excimer laser annealing |
| title_short | Aluminium-induced crystallization of silicon thin film by excimer laser annealing |
| title_sort | aluminium-induced crystallization of silicon thin film by excimer laser annealing |
| url | http://journalarticle.ukm.my/5907/1/15%2520Siti%2520Noraiza.pdf http://journalarticle.ukm.my/5907/ http://www.ukm.my/jsm/ |
| url_provider | http://journalarticle.ukm.my/ |