Search Results - Otsuka, N.

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  1. 1
    Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers

    Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers by Mohamed, Mohd Ambri, Lam, Pham Tien, Otsuka, N.

    Published 2013
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    Results from the IAEA benchmark of spallation models

    Results from the IAEA benchmark of spallation models by Khandaker, M.M., Michel, R., Leray, S., David, J.C., Konobeyev, A., Mank, G., Mengoni, A., Otsuka, N., Filges, D., Gallmeier, F.

    Published 2011
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