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    Effects of post- oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate

    Effects of post- oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate by Kurniawan, T., Wong, Y.H., Cheong, K.Y., Moon, J.H., Bahng, W., Razak, K.A., Lockman, Z., Kim, H.J., Kim, N.K.

    Published 2011
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