Search Results - Mohamed, Mohd Ambri

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  1. 1
    Characterization of carbon nanotube field-effect transistor fabricated by direct growth method

    Characterization of carbon nanotube field-effect transistor fabricated by direct growth method by Mohamed, Mohd Ambri, Asyadi Azam, Mohd, Kawabuchi, Hitoshi, Shikoh, Eiji, Fujiwara, Akihiko

    Published 2010
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  2. 2
    Fabrication of spintronics device by direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes

    Fabrication of spintronics device by direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes by Mohamed, Mohd Ambri, Inami, Nobuhito, Shikoh, Eiji, Yamamoto, Yoshiyuki, Hori, Hidenobu, Fujiwara, Akihiko

    Published 2008
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  3. 3
    Device characteristics of carbon nanotube transistor fabricated by direct growth method

    Device characteristics of carbon nanotube transistor fabricated by direct growth method by Inami, Nobuhito, Mohamed, Mohd Ambri, Shikoh, Eiji, Fujiwara, Akihiko

    Published 2008
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  4. 4
    Raman Spectra Analysis for Growth Time Dependence of Single-Walled Carbon Nanotubes from Co Catalyst

    Raman Spectra Analysis for Growth Time Dependence of Single-Walled Carbon Nanotubes from Co Catalyst by Asyadi Azam, Mohd, Mohamed, Mohd Ambri, Shih, HA, Shikoh, Eiji, Fujiwara, Akihiko

    Published 2009
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  5. 5
    Transition of electron transport process in Be-doped low-temperature-grown GaAs layer

    Transition of electron transport process in Be-doped low-temperature-grown GaAs layer by Mohamed, Mohd Ambri, Otsuka, Nobuo, Pham, Tien Lam

    Published 2013
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  6. 6
    Towards realization of carbon nanotube spintronics devices fabricated by direct growth method

    Towards realization of carbon nanotube spintronics devices fabricated by direct growth method by Mohamed, Mohd Ambri, Asyadi Azam, Mohd, Shikoh, Eiji, Fujiwara, Akihiko

    Published 2009
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  7. 7
    Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers

    Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers by Mohamed, Mohd Ambri, Lam, Pham Tien, Otsuka, N.

    Published 2013
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  8. 8
    Electronic state transition in cooperatively interacting point-defects in semiconductor crystals

    Electronic state transition in cooperatively interacting point-defects in semiconductor crystals by Mohamed, Mohd Ambri, Majlis, Yeop Burhanuddin, Ani, Mohd Hanafi

    Published 2014
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  9. 9
    Non-equilibrium critical point in Be-doped low-temperature-grown GaAs

    Non-equilibrium critical point in Be-doped low-temperature-grown GaAs by Mohamed, Mohd Ambri, Pham, Tien Lam, N., Otsuka

    Published 2013
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  10. 10
    Reconstruction and electronic properties of interface between carbon nanotubes and ferromagnetic co electrodes

    Reconstruction and electronic properties of interface between carbon nanotubes and ferromagnetic co electrodes by Cuong, Nguyen Tien, Mohamed, Mohd Ambri, Otsuka, Nobuo, Chi, Dam Hieu

    Published 2012
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  11. 11
    Channel length effect on the saturation current and the threshold voltages of CNTFET

    Channel length effect on the saturation current and the threshold voltages of CNTFET by Ani, Mohd Hanafi, Muhamad Ali, Abu Hanifah, Mohamed, Mohd Ambri

    Published 2014
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  12. 12
    Controlling the growth of single-walled carbon nanotubes using alcohol catalytic CVD method

    Controlling the growth of single-walled carbon nanotubes using alcohol catalytic CVD method by Asyadi Azam, Mohd, Mohamed, Mohd Ambri, Shikoh, Eiji, Fujiwara, Akihiko

    Published 2010
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  13. 13
    Controlling the growth of vertically aligned single walled carbon nanotubes from ethanol for electrochemical supercapacitor application

    Controlling the growth of vertically aligned single walled carbon nanotubes from ethanol for electrochemical supercapacitor application by Asyadi Azam, Mohd, Mohamed, Mohd Ambri, Shikoh, Eiji, Fujiwara, Akihiko, Shimoda, Tatsuya

    Published 2010
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  14. 14
    Synthesis-condition dependence of carbon nanotube growth by alcohol catalytic chemical vapor deposition method

    Synthesis-condition dependence of carbon nanotube growth by alcohol catalytic chemical vapor deposition method by Inami, Nobuhito, Mohamed, Mohd Ambri, Shikoh, Eiji, Fujiwara, Akihiko

    Published 2007
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  15. 15
    Effect of Polytetrafluoroethylene binder content on gravimetric capacitance and life cycle stability of graphene supercapacitor

    Effect of Polytetrafluoroethylene binder content on gravimetric capacitance and life cycle stability of graphene supercapacitor by Seman, R. N. A. R, Azam, Mohd Asyadi, Mohamed, Mohd Ambri, Ani, Mohd Hanafi

    Published 2022
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  16. 16
    Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers

    Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers by Mohamed, Mohd Ambri, Tien Lam, Pham, Bae, K. W., Otsuka, Nobuo

    Published 2011
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  17. 17
    Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer

    Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer by Ooi, Poh Choon, Mohammad Haniff, Muhammad Aniq Shazni, Mohd Razip Wee, M.F., Goh, Boon Tong, Dee, Chang Fu, Mohamed, Mohd Ambri, Majlis, Burhanuddin Yeop

    Published 2019
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  18. 18
    Effect of polytetrafluoroethylene binder content on gravimetric capacitance and life cycle stability of graphene supercapacitor

    Effect of polytetrafluoroethylene binder content on gravimetric capacitance and life cycle stability of graphene supercapacitor by Mohd Abid, Mohd Asyadi 'Azam, Raja Seman, Raja Noor Amalina, Mohamed, Mohd Ambri, Ani, Mohd. Hanafi

    Published 2022
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  19. 19
    Direct exchange interaction of localized spins associated with unpaired sp electrons in Be-doped low-temperature-grown GaAs layers

    Direct exchange interaction of localized spins associated with unpaired sp electrons in Be-doped low-temperature-grown GaAs layers by Bae, K. W., Mohamed, Mohd Ambri, Jung, DaeWon, Otsuka, Nobuo

    Published 2011
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  20. 20
    Transition metal oxide (TMO) thin film memristor on cu substrate using dilute electrodeposition method

    Transition metal oxide (TMO) thin film memristor on cu substrate using dilute electrodeposition method by Fauzi, Fatin Bazilah, Othman, Raihan, Mohamed, Mohd Ambri, Herman, Sukreen Hana, Ahmad Azhar, Ahmad Zahirani, Ani, Mohd Hanafi

    Published 2015
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