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    Optoelectronic properties comparison of 10 and 20 multi quantum wells Ga0.952In0.048N0.016As0.984/GaAs p-i-n photodetector for 1.0 μm wavelength

    Optoelectronic properties comparison of 10 and 20 multi quantum wells Ga0.952In0.048N0.016As0.984/GaAs p-i-n photodetector for 1.0 μm wavelength by Megat Hasnan, M. M. I., Nordin, M. S., Nayan, N., Mohamad, K. A., Basri, N. F., Alias, A., Vicker, A. J., Noor, I. M.

    Published 2022
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