Search Results - Alias, E. A.

Efficiency Droop Of InGaN/GaN Led With Different Indium Composition by Samsudin, M. E. A., Alias, E. A., Iza, M., Speck, J. S., Denbaars, S. P., Nakamura, S., Zainal, N.

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Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN by Ibrahim, N., Ikram Md Taib, M., Waheeda, S. N., Alias, E. A., Zainal, N.

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Comparison Between Vertical-Stand Packaging And Planar-Mounted Packaging For Gan On Gan Led by Alias, E. A., Samsudin, M. E. A., Zainal, N., Iza, M., Hassan, Abdullah I., Denbaars, S. P., Speck, J. S., Nakamura, S.

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Effect Of Varying Thermal Annealing Temperature On The Characteristics Of Lower And Higher Mg-DOPED GaN by Hanafiah, A. M., Hassan, Z., Lim, W. F., Ibrahim, N., Alias, E. A., Ahmad, M. A., Hamzah, N. A., Asri, R. I. M.

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Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes by Asri, R. I. M, Hamzah, N. A, Ahmad, M. A., Alias, E. A., Sahar, M. M., Abdullah, M.

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