Search Results - Ahmad I.B.
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Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device by Atan N.B., Ahmad I.B., Majlis B.B.Y.
Published 2023Conference Paper -
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Influence of process parameters on threshold voltage and leakage current in 18nm NMOS device by Atan N.B., Ahmad I.B., Majlis B.B.Y., Fauzi I.B.A.
Published 2023Conference Paper -
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Influence of optimization of control factors on threshold voltage of 18 nm HfO2/TiSi2 NMOS by Atan N.B., Majlis B.B.Y., Ahmad I.B., Chong K.H.
Published 2023Article -
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Improved series resistance model for CMOS ESD diodes by Kamal N.B., Kordesch A.V., Ahmad I.B.
Published 2023Conference paper -
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Highly porous NiO nanoflower-based humidity sensor grown on seedless glass substrate via one-step simplistic immersion method by Norfarariyanti Parimon, M. H. Mamat, M. K. Ahmad, I. B. Shameem Banu, M. Rusop
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Physical properties of novel a-Fe2O3/NiO heterostructures through immersion/ Sol–Gel spin coating method: Different deposition numbers of NiO layer by Norfarariyanti Parimon, M.H. Mamat, A.B. Suriani, A. Mohamed, M.K. Ahmad, I.B. Shameem Banu, N. Vasimalai, M. Rusop
Published 2021Get full text
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