Si-quantum Dots (QD) and SiO2 tunnel barriers
Oxidation of Si for nanostructures on silicon-on-insulator (SOI) substrates is a key process in the fabrication of Si single electron transistor (SET). The most di cult aspect of the fabrication process is the formation of a nanometerscale island sandwiched between two small capacitors having a...
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| Main Authors: | , , |
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| 格式: | Article |
| 語言: | English |
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Universiti Malaysia Perlis (UniMAP)
2010
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| 在線閱讀: | http://dspace.unimap.edu.my/xmlui/handle/123456789/9934 |
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