Si-quantum Dots (QD) and SiO2 tunnel barriers
Oxidation of Si for nanostructures on silicon-on-insulator (SOI) substrates is a key process in the fabrication of Si single electron transistor (SET). The most di cult aspect of the fabrication process is the formation of a nanometerscale island sandwiched between two small capacitors having a...
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my.unimap-99342010-10-20T09:25:50Z Si-quantum Dots (QD) and SiO2 tunnel barriers Sutikno, Madnasri Uda, Hashim, Prof. Dr. Zul Azhar, Zahid Jamal, Prof. Dr. smadnasri@yahoo.com Explore -- Penerbitan universiti UniMAP -- Publications UniMAP -- Research and development SiO2 tunnel barriers Silicon-on-insulator (SOI) Si-quantum Dots (QD) Oxidation of Si for nanostructures on silicon-on-insulator (SOI) substrates is a key process in the fabrication of Si single electron transistor (SET). The most di cult aspect of the fabrication process is the formation of a nanometerscale island sandwiched between two small capacitors having a very thin insulator to allow electrons to pass through in a stochastic process, known as PADOX. This oxidation creates an island sandwiched between two tunnel barriers which constitutes a SET. The constriction of Si causes automatic tunnel barrier formation between source–QD and drain-QD. The unique characteristics of PADOX arises from i) the suppression of oxidation by mechanical stress, and ii) the oxidation from below. 2010-10-20T09:25:50Z 2010-10-20T09:25:50Z 2008-07 Article p.8-9 1823-9633 http://hdl.handle.net/123456789/9934 en Explore July 2008 Universiti Malaysia Perlis (UniMAP) Pejabat Timbalan Naib Canselor (Penyelidikan dan Inovasi) |
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Explore -- Penerbitan universiti UniMAP -- Publications UniMAP -- Research and development SiO2 tunnel barriers Silicon-on-insulator (SOI) Si-quantum Dots (QD) |
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Explore -- Penerbitan universiti UniMAP -- Publications UniMAP -- Research and development SiO2 tunnel barriers Silicon-on-insulator (SOI) Si-quantum Dots (QD) Sutikno, Madnasri Uda, Hashim, Prof. Dr. Zul Azhar, Zahid Jamal, Prof. Dr. Si-quantum Dots (QD) and SiO2 tunnel barriers |
| description |
Oxidation of Si for nanostructures on silicon-on-insulator
(SOI) substrates is a key process in the fabrication of Si
single electron transistor (SET). The most di cult aspect of
the fabrication process is the formation of a nanometerscale
island sandwiched between two small capacitors
having a very thin insulator to allow electrons to pass
through in a stochastic process, known as PADOX. This
oxidation creates an island sandwiched between two
tunnel barriers which constitutes a SET. The constriction of
Si causes automatic tunnel barrier formation between
source–QD and drain-QD. The unique characteristics of
PADOX arises from i) the suppression of oxidation by
mechanical stress, and ii) the oxidation from below. |
| author2 |
smadnasri@yahoo.com |
| author_facet |
smadnasri@yahoo.com Sutikno, Madnasri Uda, Hashim, Prof. Dr. Zul Azhar, Zahid Jamal, Prof. Dr. |
| format |
Article |
| author |
Sutikno, Madnasri Uda, Hashim, Prof. Dr. Zul Azhar, Zahid Jamal, Prof. Dr. |
| author_sort |
Sutikno, Madnasri |
| title |
Si-quantum Dots (QD) and SiO2 tunnel barriers |
| title_short |
Si-quantum Dots (QD) and SiO2 tunnel barriers |
| title_full |
Si-quantum Dots (QD) and SiO2 tunnel barriers |
| title_fullStr |
Si-quantum Dots (QD) and SiO2 tunnel barriers |
| title_full_unstemmed |
Si-quantum Dots (QD) and SiO2 tunnel barriers |
| title_sort |
si-quantum dots (qd) and sio2 tunnel barriers |
| publisher |
Universiti Malaysia Perlis (UniMAP) |
| publishDate |
2010 |
| url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/9934 |
| _version_ |
1643789709698138112 |
| score |
13.244413 |