Physical properties of porous In₀.₀₈Ga₀.₉₂N
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Universiti Malaysia Perlis
2016
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my.unimap-413132017-11-21T01:58:21Z Physical properties of porous In₀.₀₈Ga₀.₉₂N H. Abud, Saleh Hassan, Z. Yam, F. K. salehhasson71@gmail.com zai@usm.my yamfk@yahoo.com Porous InGaN III-nitride HR-XRD Photoluminescence Link to publisher's homepage at http://ijneam.unimap.edu.my/ In this study, nanoporous structures on In₀.₀₈Ga₀.₉₂N/AlN/Si thin films with a thickness of 1 μm were synthesized by photoelectrochemical etching technique at various etching durations. The structural and optical properties of the pre- and post-etched thin films were investigated. The field emission scanning electron microscope images and X-Ray diffraction measurements revealed that the films pre-etched thin film has a sufficiently smooth surface over a large region with wurtzite structure. The roughness increased with an increase in etching duration. The photoluminescence emission peaks had a blue shift phenomenon for the post-etched films at room temperature, compared with the pre-etched film. The photoluminescence intensities of porous InGaN structures were enhanced when the nanoporous structure was formed. 2016-04-22T08:01:35Z 2016-04-22T08:01:35Z 2015 Article International Journal of Nanoelectronics and Materials, vol.8 (1), 2015, pages 33-38 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41313 en Universiti Malaysia Perlis |
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Porous InGaN III-nitride HR-XRD Photoluminescence |
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Porous InGaN III-nitride HR-XRD Photoluminescence H. Abud, Saleh Hassan, Z. Yam, F. K. Physical properties of porous In₀.₀₈Ga₀.₉₂N |
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Link to publisher's homepage at http://ijneam.unimap.edu.my/ |
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salehhasson71@gmail.com |
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salehhasson71@gmail.com H. Abud, Saleh Hassan, Z. Yam, F. K. |
format |
Article |
author |
H. Abud, Saleh Hassan, Z. Yam, F. K. |
author_sort |
H. Abud, Saleh |
title |
Physical properties of porous In₀.₀₈Ga₀.₉₂N |
title_short |
Physical properties of porous In₀.₀₈Ga₀.₉₂N |
title_full |
Physical properties of porous In₀.₀₈Ga₀.₉₂N |
title_fullStr |
Physical properties of porous In₀.₀₈Ga₀.₉₂N |
title_full_unstemmed |
Physical properties of porous In₀.₀₈Ga₀.₉₂N |
title_sort |
physical properties of porous in₀.₀₈ga₀.₉₂n |
publisher |
Universiti Malaysia Perlis |
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2016 |
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http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41313 |
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1643802795365629952 |
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13.239859 |