Physical properties of porous In₀.₀₈Ga₀.₉₂N

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Main Authors: H. Abud, Saleh, Hassan, Z., Yam, F. K.
Other Authors: salehhasson71@gmail.com
Format: Article
Language:English
Published: Universiti Malaysia Perlis 2016
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Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41313
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spelling my.unimap-413132017-11-21T01:58:21Z Physical properties of porous In₀.₀₈Ga₀.₉₂N H. Abud, Saleh Hassan, Z. Yam, F. K. salehhasson71@gmail.com zai@usm.my yamfk@yahoo.com Porous InGaN III-nitride HR-XRD Photoluminescence Link to publisher's homepage at http://ijneam.unimap.edu.my/ In this study, nanoporous structures on In₀.₀₈Ga₀.₉₂N/AlN/Si thin films with a thickness of 1 μm were synthesized by photoelectrochemical etching technique at various etching durations. The structural and optical properties of the pre- and post-etched thin films were investigated. The field emission scanning electron microscope images and X-Ray diffraction measurements revealed that the films pre-etched thin film has a sufficiently smooth surface over a large region with wurtzite structure. The roughness increased with an increase in etching duration. The photoluminescence emission peaks had a blue shift phenomenon for the post-etched films at room temperature, compared with the pre-etched film. The photoluminescence intensities of porous InGaN structures were enhanced when the nanoporous structure was formed. 2016-04-22T08:01:35Z 2016-04-22T08:01:35Z 2015 Article International Journal of Nanoelectronics and Materials, vol.8 (1), 2015, pages 33-38 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41313 en Universiti Malaysia Perlis
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Porous InGaN
III-nitride
HR-XRD
Photoluminescence
spellingShingle Porous InGaN
III-nitride
HR-XRD
Photoluminescence
H. Abud, Saleh
Hassan, Z.
Yam, F. K.
Physical properties of porous In₀.₀₈Ga₀.₉₂N
description Link to publisher's homepage at http://ijneam.unimap.edu.my/
author2 salehhasson71@gmail.com
author_facet salehhasson71@gmail.com
H. Abud, Saleh
Hassan, Z.
Yam, F. K.
format Article
author H. Abud, Saleh
Hassan, Z.
Yam, F. K.
author_sort H. Abud, Saleh
title Physical properties of porous In₀.₀₈Ga₀.₉₂N
title_short Physical properties of porous In₀.₀₈Ga₀.₉₂N
title_full Physical properties of porous In₀.₀₈Ga₀.₉₂N
title_fullStr Physical properties of porous In₀.₀₈Ga₀.₉₂N
title_full_unstemmed Physical properties of porous In₀.₀₈Ga₀.₉₂N
title_sort physical properties of porous in₀.₀₈ga₀.₉₂n
publisher Universiti Malaysia Perlis
publishDate 2016
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41313
_version_ 1643802795365629952
score 13.239859