UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime

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Main Authors: Mohd Khairuddin, Md. Arshad, Makovejev, Sergej, Olsen, Sarah H., Andrieu, F., Raskin, Jean Pierre, Flandre, Denis, Kilchytska, Valeriya I.
其他作者: mohd.khairuddin@unimap.edu.my
格式: Article
语言:English
出版: Elsevier Ltd. 2014
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在线阅读:http://dspace.unimap.edu.my:80/dspace/handle/123456789/34409
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