Modelling and switching simulation of gate turn-off thyristor using finite element method
The gate turn-off (GTO) thyristor has the best voltage blocking and current conducting capabilities among all known high power semiconductor switching devices. The switching characteristics of a GTO thyristor are influenced by doping profile, material properties, lifetime and mobility of holes an...
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| 第一著者: | |
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| フォーマット: | 学位論文 |
| 言語: | English |
| 出版事項: |
2010
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| オンライン･アクセス: | http://umpir.ump.edu.my/id/eprint/2187/1/NORAINON_MOHAMED.PDF http://umpir.ump.edu.my/id/eprint/2187/ |
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