Modelling and switching simulation of gate turn-off thyristor using finite element method
The gate turn-off (GTO) thyristor has the best voltage blocking and current conducting capabilities among all known high power semiconductor switching devices. The switching characteristics of a GTO thyristor are influenced by doping profile, material properties, lifetime and mobility of holes an...
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| المؤلف الرئيسي: | |
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| التنسيق: | أطروحة |
| اللغة: | English |
| منشور في: |
2010
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://umpir.ump.edu.my/id/eprint/2187/1/NORAINON_MOHAMED.PDF http://umpir.ump.edu.my/id/eprint/2187/ |
| الوسوم: |
إضافة وسم
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| الملخص: | The gate turn-off (GTO) thyristor has the best voltage blocking and current conducting
capabilities among all known high power semiconductor switching devices. The
switching characteristics of a GTO thyristor are influenced by doping profile, material
properties, lifetime and mobility of holes and electrons. Recently, most of the research
on GTO thyristor is strictly experimental and has focused on their physical
performances. On the other hand, the internal behaviour of GTO thyristor is not well
understood. The best accuracy switching waveforms and the internal behaviour of the
device can only be addressed by device simulation. Physical models (Poisson equation,
drift-diffusion and current-continuity equations) of GTO thyristor are valuable for
studying the internal behaviour of the device is used in the simulation. These equations
are numerically solved by using finite element method. This project presents: the
modelling and switching simulation of GTO thyristor device by developing a device
simulation software. The software is designed by using MATLAB Graphical User
Interface (GUI) development environment. The device model has been developed based
on the device structure and operation. The thesis focuses on the study of a comparison
between silicon and silicon carbide GTO thyristor in terms of switching time
performances and efficiency at the system level. |
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