Temperature dependence of raman scattering in 4H-SiC films under different growth conditions
The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80K to 550 K. The effects of growth conditions on E-2(TO), E-1(TO) and A(1)(LO) phonon mode frequencies are negligible. The...
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| Main Authors: | , , , , , , , |
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| 格式: | Article |
| 语言: | English |
| 出版: |
Iop Publishing Ltd, Temple Circus, Temple Way, Bristol Bs1 6be, England
2015
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| 主题: | |
| 在线阅读: | http://eprints.um.edu.my/13808/1/Temperature_Dependence_of_Raman_Scattering_in_4H-SiC_Films.pdf http://eprints.um.edu.my/13808/ http://iopscience.iop.org/0256-307X/32/4/047801/pdf/0256-307X_32_4_047801.pdf |
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